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Crack control in GaN grown on silicon (1 1 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

✍ Scribed by Jiejun Wu; Xiuxun Han; Jiemin Li; Hongyuan Wei; Guangwei Cong; Xianglin Liu; Qinsheng Zhu; Zhanguo Wang; Quanjie Jia; Liping Guo; Tiandou Hu; Huanhua Wang

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 229 KB
Volume: 28
Category: Article
ISSN: 0925-3467
DOI: 10.1016/j.optmat.2005.08.004

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