doped GaN layers, 2 mm thick metal organic chemical vapor deposition (MOCVD)-grown GaN templates on sapphire (0 0 0 1) substrates were prepared. The 2 mm GaN buffer layer exhibits ntype and a carrier concentration of 2.5 Â 10 17 cm À3 . The GaMnN films were produced at various Mn-cell temperatures r
Optical investigation of ferromagnetic Ga1−xMnxN layers grown on sapphire (0 0 0 1) substrates
✍ Scribed by I.T. Yoon; J.M. Myoung
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 395 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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