Composition modulation analysis of InxGa1−xP layers grown on (0 0 1) germanium substrates
✍ Scribed by C.E. Pastore; D. Araújo; M. Gutiérrez; J. Miguel-Sánchez; E. Rodríguez-Messmer
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 366 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the
doped GaN layers, 2 mm thick metal organic chemical vapor deposition (MOCVD)-grown GaN templates on sapphire (0 0 0 1) substrates were prepared. The 2 mm GaN buffer layer exhibits ntype and a carrier concentration of 2.5 Â 10 17 cm À3 . The GaMnN films were produced at various Mn-cell temperatures r
The spontaneous Hall e ect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes alon