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Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

✍ Scribed by I.T. Yoon; M.H. Ham; J.M. Myoung

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
518 KB
Volume
255
Category
Article
ISSN
0169-4332

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✦ Synopsis

doped GaN layers, 2 mm thick metal organic chemical vapor deposition (MOCVD)-grown GaN templates on sapphire (0 0 0 1) substrates were prepared. The 2 mm GaN buffer layer exhibits ntype and a carrier concentration of 2.5 Â 10 17 cm À3 . The GaMnN films were produced at various Mn-cell temperatures ranging from 600 to 700 8C and at a fixed Ga-cell temperature of 1000 8C.

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