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Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN

✍ Scribed by Wei Zhao; Lai Wang; Jiaxing Wang; Zhibiao Hao; Yi Luo

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 225 KB
Volume: 327
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.05.002

No coin nor oath required. For personal study only.

✦ Synopsis

When the thickness of InGaN film grown on (0 0 0 1) GaN is beyond a critical value, the compressive strain will be relaxed through dislocation generation or three-dimensional growth. We calculate the InGaN critical thicknesses for dislocation generation and three-dimensional growth depending on the indium composition, respectively. The results show that both the critical thicknesses decrease with increase of the indium composition. When the indium composition is lower than 27%, the latter is smaller. This means threedimensional growth will be induced more easily than the dislocation generation. But when the indium composition is higher than 27%, dislocations become to generate more easily. The extension of dislocations from GaN into InGaN can relax a part of strain and increases the critical thickness.

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Theoretical study on critical thicknesses of InGaN grown on (0&#xa0;0&#xa0;0&#xa0;1) GaN

✦ Synopsis

Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN