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Growth mechanism of iron nanoparticles on (0 0 0 1) sapphire wafers

✍ Scribed by W. De La Cruz; C. Gallardo-Vega; S. Tougaard; L. Cota

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
149 KB
Volume
39
Category
Article
ISSN
0026-2692

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✦ Synopsis

Laser ablation of a high purity (99.7%) iron target was used to accomplish the depositions of iron nanoparticles on the (0 0 0 1) face of single crystal sapphire wafers. The nanoparticles were characterized in situ by means of X-ray photoelectron spectroscopy (XPS). The growth mechanism was determined by applying the QUASES-Tougaard methodology to the extended part of the background intensity of the Fe KMM peak in XPS spectra. The heights of nanoparticles obtained are between 3.5 and 6.5 nm. In the first 150 laser pulses, the height of the nanoparticles remained constant while the coverage was increased.

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