✦ LIBER ✦

Fabrication and photoluminescence of GaN nanorods by ammoniating films deposited on Co-coated Si(1 1 1) substrates

✍ Scribed by Lixia Qin; Chengshan Xue; Yifeng Duan; Liwei Shi

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 439 KB
Volume: 404
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2008.10.023

No coin nor oath required. For personal study only.

✦ Synopsis

GaN nanorods were synthesized in mass by ammoniating Ga 2 O 3 films sputtered on Si(111) substrates using cobalt as a catalyst. X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and photoluminescence were used to characterize the products. The results show the as-synthesized samples are of single-crystalline hexagonal wurtzite structure with the space group of P6 3 mc. The nanorods are straight and have a smooth surface with diameters around 200 nm and lengths up to tens of microns. The catalytic growth mechanism of GaN nanorods was also discussed.

📜 SIMILAR VOLUMES

Fabrication, morphology, and photolumine

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

✍ Zhaozhu Yang; Chengshan Xue; Huizhao Zhuang; Lixia Qin; Jinhua Chen; Hong Li; Do 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 821 KB

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra

Comparison of ZnO:GaN films on Si(1&#xa0

Comparison of ZnO:GaN films on Si(1 1 1) and Si(1 0 0) substrates by pulsed laser deposition

✍ N. Gopalakrishnan; B.C. Shin; H.S. Lim; G.Y. Kim; Y.S. Yu 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Formation mechanisms of GaN nanorods gro

Formation mechanisms of GaN nanorods grown on Si(1 1 1) substrates

✍ Y.H. Kwon; K.H. Lee; S.Y. Ryu; T.W. Kang; C.H. You; T.W. Kim 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 698 KB

Synthesis and characterization of GaN na

Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates

✍ Feng Shi; Zouping Wang; Chengshan Xue 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 949 KB

Synthesis of GaN nanowires by ammoniatio

Synthesis of GaN nanowires by ammoniation of Ga2O3 films on Nb layer deposited on Si(1 1 1) substrates

✍ Jie Wang; Hui-zhao Zhuang; Bao-li Li; Jun-lin Li 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 450 KB

Growth and fabrication of AlGaN/GaN HEMT

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

✍ Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 262 KB

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H

Fabrication and photoluminescence of GaN nanorods by ammoniating films deposited on Co-coated Si(1&#xa0;1&#xa0;1) substrates

✦ Synopsis

Fabrication and photoluminescence of GaN nanorods by ammoniating films deposited on Co-coated Si(1 1 1) substrates