Synthesis of GaN nanowires by ammoniation of Ga2O3 films on Nb layer deposited on Si(1 1 1) substrates
β Scribed by Jie Wang; Hui-zhao Zhuang; Bao-li Li; Jun-lin Li
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 450 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1369-8001
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π SIMILAR VOLUMES
GaN nanorods were synthesized in mass by ammoniating Ga 2 O 3 films sputtered on Si(111) substrates using cobalt as a catalyst. X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and photoluminescence were used to chara
GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra
The substrates used in the experiment were (1 1 1)-oriented ntype Ge wafers with the resistivity of 2-5 V cm. NHO ceramic