Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates
β Scribed by Feng Shi; Zouping Wang; Chengshan Xue
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 949 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
GaN nanorods were synthesized in mass by ammoniating Ga 2 O 3 films sputtered on Si(111) substrates using cobalt as a catalyst. X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and photoluminescence were used to chara
GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra