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Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

✍ Scribed by M. Gassoumi; J.M. Bluet; C. Gaquière; G. Guillot; H. Maaref

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
291 KB
Volume
40
Category
Article
ISSN
0026-2692

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✍ Lossy, R. ;Chaturvedi, N. ;Heymann, P. ;W�rfl, J. ;M�ller, S. ;K�hler, K. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 2 views

Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma