✦ LIBER ✦
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
✍ Scribed by N. Sghaier; M. Trabelsi; N. Yacoubi; J.M. Bluet; A. Souifi; G. Guillot; C. Gaquière; J.C. DeJaeger
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 397 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0026-2692
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