Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma
β¦ LIBER β¦
Optical characterization of InGaN/AlGaN/GaN diode grown on silicon carbide
β Scribed by Haddou EL Ghazi; Anouar Jorio; Izeddine Zorkani; Mohamed Ouazzani-Jamil
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 164 KB
- Volume
- 281
- Category
- Article
- ISSN
- 0030-4018
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