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Investigation of AlGaN/GaN HEMTs on Si Substrate Using Backgating

✍ Scribed by M. Marso; M. Wolter; P. Javorka; A. Alam; A. Fox; M. Heuken; P. Kordoš; H. Lüth


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
96 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote

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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we