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High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

✍ Scribed by M. Werquin; D. Ducatteau; N. Vellas; E. Delos; Y. Cordier; R. Aubry; C. Gaquière

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
82 KB
Volume
48
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of this technology for power applications at microwave frequencies is confirmed. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2301–2305, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21897

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