𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

✍ Scribed by Y. Guhel; B. Boudart; V. Hoel; M. Werquin; C. Gaquiere; J. C. De Jaeger; M. A. Poisson; I. Daumiller; E. Kohn

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
98 KB
Volume
34
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperature. Β© 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 4–6, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10355

πŸ“œ SIMILAR VOLUMES

High temperature pulsed measurements of
High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate
✍ M. Werquin; D. Ducatteau; N. Vellas; E. Delos; Y. Cordier; R. Aubry; C. GaquiΓ¨re πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 82 KB

## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote

Reliability Evaluation of High Power AlG
Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 86 KB πŸ‘ 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we

Effect of Illumination on the Electrical
Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs
✍ Dietrich, R. ;Vescan, A. ;Wieszt, A. ;Leier, H. ;Boutros, K. S. ;Redwing, J. M. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 136 KB πŸ‘ 2 views

a), A. Vescan (a), A. Wieszt (a), H. Leier (a), K. S. Boutros (b), J. M. Redwing (b), K. Kornitzer (c), R. Freitag (c), T. Ebner (c), and K. Thonke (c)