𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs

✍ Scribed by Akita, M. ;Kishimoto, K. ;Mizutani, T.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
105 KB
Volume
188
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effects of high temperature on the elect
✍ Y. Guhel; B. Boudart; V. Hoel; M. Werquin; C. Gaquiere; J. C. De Jaeger; M. A. P πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 98 KB

## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera

High temperature pulsed measurements of
✍ M. Werquin; D. Ducatteau; N. Vellas; E. Delos; Y. Cordier; R. Aubry; C. GaquiΓ¨re πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 82 KB

## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote

Reliability Evaluation of High Power AlG
✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 86 KB πŸ‘ 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we