Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs
β Scribed by Akita, M. ;Kishimoto, K. ;Mizutani, T.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 105 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Highβtemperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These highβtempera
## Abstract DCβ and RFβpulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300β525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote
Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we