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Substrate removal of AlGaN/GaN HEMTs using laser lift-off

✍ Scribed by J. Das; W. Ruythooren; R. Vandersmissen; J. Derluyn; M. Germain; G. Borghs


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
129 KB
Volume
2
Category
Article
ISSN
1862-6351

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First results of AlGaN/GaN HEMTs on sapp
✍ M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J. C. Pesant; Z. Boug πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 226 KB

AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar Ο© ions implant-isolation technology. The first results obtained are very good in terms of device isolation.