✦ LIBER ✦
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
✍ Scribed by M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J. C. Pesant; Z. Bougrioua; M. Germain; J. C. De Jaeger; C. Gaquiere
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 226 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar ϩ ions implant-isolation technology. The first results obtained are very good in terms of device isolation.