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Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

✍ Scribed by D. Gregušová; J. Bernát; M. Držík; M. Marso; J. Novák; F. Uherek; P. Kordoš

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
201 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high‐tempera