Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from
Performance improvement of AlGaN/GaN HEMTs using two-step silicon nitride passivation
โ Scribed by Heng-Kuang Lin; Hsiang-Lin Yu; F.-H. Huang
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 519 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
โฆ Synopsis
A triple-band dipole antenna with wideband balun integration is proposed in this article. This antenna consists of two dipoles, a wideband balun and feeding line. These three parts are integrated into a compact design, which has a small size of 30 ร 25 ร 0.8 mm 3 based on the substrate having a dielectric constant of 2.55. The simulated results show that triple bands of 2.40-2.59 GHz, 3.42-3.80 GHz, and 5.06-5.95 GHz are attained by this antenna, and can cover the bands of WLAN/WiMAX. The simulated and measured radiation patterns at different center frequency are also demonstrated and the designs of dipoles and balun are also provided, which exemplify omnidirectional characteristics in the H-plane.
๐ SIMILAR VOLUMES