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Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

✍ Scribed by M. Bouya; D. Carisetti; N. Malbert; N. Labat; P. Perdu; J.C. Clément; M. Bonnet; G. Pataut

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 472 KB
Volume: 47
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2007.07.085

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