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DC and RF Characteristics of AlN/GaN Doped Channel Heterostructure Field Effect Transistor

✍ Scribed by Daumiller, I. ;Schmid, P. ;Kohn, E. ;Kirchner, C. ;Kamp, M. ;Ebeling, K. J. ;Pond, L. L. ;Weitzel, C.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
113 KB
Volume
176
Category
Article
ISSN
0031-8965

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✦ Synopsis

First small signal, large signal and rf power characteristics of experimental 3 mm gate length AlN/GaN devices are reported between RT and 200 C. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the development of high power/high speed devices.

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