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Characteristics of the GaAs monolayer-doped structure and its applications for power field-effect transistor fabrication

✍ Scribed by Wen-Chau Liu; Chung-Yih Sun; Wen-Shiung Lour

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
493 KB
Volume
7
Category
Article
ISSN
0921-5107

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