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Current–voltage characteristics and field distribution of pseudomorphic (AlGaAs/InGaAs) modulation-doped field-effect transistor for microwave circuit applications

✍ Scribed by Anju Agrawal; Anisha Goswami; Sujata Sen; R. S. Gupta

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
194 KB
Volume
24
Category
Article
ISSN
0895-2477

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✦ Synopsis

A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨elocity profiles are expressed explicitly in the saturation region. The results so obtained are compared with the experimental data, and show excellent agreement, thereby pro¨ing the ¨alidity of the model.

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