A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨el
✦ LIBER ✦
Analytical model for dc characteristics and small-signal parameters of AIGaN/GaN modulation-doped field-effect transistor for microwave circuit applications
✍ Scribed by Rashmi; Angu Agrawal; S. Sen; S. Haldar; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 226 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.
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be easily realized with a single metal insert within a rectangular waveguide. Measured frequency responses of a rectangular waveguide E-plane bandpass filter which used quarterwavelength metallic septa shows 30 dB rejection at 36 GHz. The central resonator was resonant at 36.8 GHz. This kind of reso