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Analytical model for dc characteristics and small-signal parameters of AIGaN/GaN modulation-doped field-effect transistor for microwave circuit applications

✍ Scribed by Rashmi; Angu Agrawal; S. Sen; S. Haldar; R. S. Gupta


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
226 KB
Volume
27
Category
Article
ISSN
0895-2477

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✦ Synopsis


rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.


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