An analytical model for two-dimensional electron gas ( ) 2-DEG for a pseudomorphic Al Ga As r In Ga As modulaz 1 y z y 1 y y tion-doped field-effect transistor is de¨eloped. The 2-DEG density is calculated as a function of de¨ice dimensions and doping density. A simple analytical expression is estab
Frequency optimization of pseudomorphic modulation-doped field-effect transistor (AlGaAs/InGaAs) for microwave and millimeter-wave applications
✍ Scribed by Anju Agrawal; Anisha Goswami; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 165 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
ᎏdynamic, DC, and OIL chirp. By numerically analyzing the rate equations for the injection-locked laser, it is shown that the OIL chirp is compatible to the DC and dynamic chirp, but different in sign. Hence, a considerable reduction in frequency chirp can be achieved by the OIL. REFERENCES 1. C. Lin and F. Mengel, Reduction of frequency chirping and dynamic linewidth in high-speed directly modulated semiconduc-Ž . tor lasers by injection locking, Electron Lett 20 1984 , 1073᎐1075. 2. M. Yoshno and K. Inoue, Chirp reduction in wavelength conversion using a laser diode by injection locking, Electron Lett 30 Ž .
📜 SIMILAR VOLUMES
A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨el
be easily realized with a single metal insert within a rectangular waveguide. Measured frequency responses of a rectangular waveguide E-plane bandpass filter which used quarterwavelength metallic septa shows 30 dB rejection at 36 GHz. The central resonator was resonant at 36.8 GHz. This kind of reso
rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.