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Transconductance extraction for pseudomorphic modulation-doped field-effect transistor (AlGaAs/InGaAs) for microwave and millimeter-wave applications

✍ Scribed by Anju Agrawal; Anisha Goswami; Sujata Sen; R. S. Gupta

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
198 KB
Volume
22
Category
Article
ISSN
0895-2477

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✦ Synopsis

An analytical model for two-dimensional electron gas ( ) 2-DEG for a pseudomorphic Al Ga As r In Ga As modulaz 1 y z y 1 y y tion-doped field-effect transistor is de¨eloped. The 2-DEG density is calculated as a function of de¨ice dimensions and doping density. A simple analytical expression is established for the charge control. A high transconductance of 270 mSrmm is obtained, which is important in realizing the de¨ice for millimeter microwa¨e applications. The results so obtained are compared with experimental data, and show excellent agreement.

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