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Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

✍ Scribed by Dattatray J. Late; Anupama Ghosh; K.S. Subrahmanyam; L.S. Panchakarla; S.B. Krupanidhi; C.N.R. Rao

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 567 KB
Volume: 150
Category: Article
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2010.01.030

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✦ Synopsis

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and ntype behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively.

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