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Field-effect transistor based on a combination of nanometer film and undoped semiconductor

✍ Scribed by Qi Yang; Dejie Li; Baolun Yao

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
284 KB
Volume
253
Category
Article
ISSN
0169-4332

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A well-behaved field effect transistor b
A well-behaved field effect transistor based on an intrinsic molecular semiconductor
✍ R. Madru; G. Guillaud; M. Al Sadoun; M. Maitrot; J.-J. AndrΓ©; J. Simon; R. Even πŸ“‚ Article πŸ“… 1988 πŸ› Elsevier Science 🌐 English βš– 278 KB

The electrical characteristics of an insulated gate field effect transistor (FET) based on an intrinsic molecular semiconductor, bis(phthalocyaninato)lutetium (Pc\*Lu), are described. All the usual parameters of conventional devices are determined; the threshold voltage ( -2 V), the transconductance