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A well-behaved field effect transistor based on an intrinsic molecular semiconductor

✍ Scribed by R. Madru; G. Guillaud; M. Al Sadoun; M. Maitrot; J.-J. André; J. Simon; R. Even

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
278 KB
Volume
145
Category
Article
ISSN
0009-2614

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✦ Synopsis

The electrical characteristics of an insulated gate field effect transistor (FET) based on an intrinsic molecular semiconductor, bis(phthalocyaninato)lutetium (Pc*Lu), are described. All the usual parameters of conventional devices are determined; the threshold voltage ( -2 V), the transconductance (0.5X 10e9 Q-r) and the amplification factor ( 15) are compared with the values found for silicon-based devices.

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