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The first field effect transistor based on an intrinsic molecular semiconductor

✍ Scribed by M. Madru; G. Guillaud; M.Al Sadoun; M. Maitrot; C. Clarisse; M.Le Contellec; J.-J. André; J. Simon

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
243 KB
Volume
142
Category
Article
ISSN
0009-2614

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✦ Synopsis

An insulated gate field effect transistor based on an intrinsic molecular semiconductor, bis( phthalocyaninato)lutetium (Pc,Lu), is described for the first time.

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