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High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential

✍ Scribed by J. H. Gao; R. J. Li; L. Q. Li; Q. Meng; H. Jiang; H. X. Li; W. P. Hu


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
179 KB
Volume
19
Category
Article
ISSN
0935-9648

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