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Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

✍ Scribed by Ching-Sung Lee; Wei-Chou Hsu

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
265 KB
Volume
30
Category
Article
ISSN
0749-6036

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✦ Synopsis

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.

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