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Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

✍ Scribed by Gaska, R.; Shur, M. S.; Fjeldly, T. A.; Bykhovski, A. D.

Book ID: 111682912
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 318 KB
Volume: 85
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.369621

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