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Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

✍ Scribed by Rumyantsev, S.L.; Pala, N.; Shur, M.S.; Borovitskaya, E.; Dmitriev, A.P.; Levinshtein, M.E.; Gaska, R.; Khan, M.A.; Jinwei Yang; Xuhong Hu; Simin, G.

Book ID: 114538603
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 108 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.906447

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