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High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

✍ Scribed by Chen, Q.; Asif Khan, M.; Yang, J. W.; Sun, C. J.; Shur, M. S.; Park, H.

Book ID: 118049596
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 468 KB
Volume: 69
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.117894

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