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Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

✍ Scribed by Sarua, A.; Ji, Hangfeng; Kuball, M.; Uren, M. J.; Martin, T.; Nash, K. J.; Hilton, K. P.; Balmer, R. S.

Book ID: 118007303
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 690 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2182011

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