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Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors

✍ Scribed by Bykhovski, A. D.; Gaska, R.; Shur, M. S.

Book ID: 111960142
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 312 KB
Volume: 73
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.122829

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