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Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300âÂ°C

✍ Scribed by Khan, M. Asif; Shur, Michael S.; Kuznia, John N.; Chen, Q.; Burm, Jin; Schaff, William

Book ID: 121324276
Publisher: American Institute of Physics
Year: 1995
Tongue: English
Weight: 234 KB
Volume: 66
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.113579

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Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300âÂ°C

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300âÂ°C