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Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

✍ Scribed by Hsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; Wang, Yi-Jie; Weng, You-Chen

Book ID: 124097262
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 981 KB
Volume: 7
Category: Article
ISSN: 1882-0778
DOI: 10.7567/APEX.7.055501

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