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AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

✍ Scribed by X. Hu; J. Deng; N. Pala; R. Gaska; M. S. Shur; C. Q. Chen; J. Yang; G. Simin; M. A. Khan; J. C. Rojo; L. J. Schowalter


Book ID
125843192
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
375 KB
Volume
82
Category
Article
ISSN
0003-6951

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## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,