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Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

✍ Scribed by Chen, Q.; Yang, J.; Gradinaru, G.; Khan, M. Asif; Kao, N. C.; Sudarshan, T. S.

Book ID: 121479455
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 245 KB
Volume: 72
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.120597

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