✦ LIBER ✦

AlGaN/GaN heterostructure field-effect transistor model including thermal effects

✍ Scribed by Albrecht, J.D.; Ruden, P.P.; Binari, S.C.; Ancona, M.G.

Book ID: 114538311
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 125 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.877163

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

AlGaN/GaInN/GaN heterostructure field-ef

AlGaN/GaInN/GaN heterostructure field-effect transistor

✍ Ikki, Hiromichi ;Isobe, Yasuhiro ;Iida, Daisuke ;Iwaya, Motoaki ;Takeuchi, Tetsu 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 428 KB

## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,

GaNâAlGaN heterostructure field-effect

GaNâAlGaN heterostructure field-effect transistors over bulk GaN substrates

✍ Asif Khan, M.; Yang, J. W.; Knap, W.; Frayssinet, E.; Hu, X.; Simin, G.; Prystaw 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 292 KB

Prebreakdown and breakdown effects in Al

Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

✍ Chen, Q.; Yang, J.; Gradinaru, G.; Khan, M. Asif; Kao, N. C.; Sudarshan, T. S. 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 245 KB

Generation-recombination noise in GaN/Al

Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

✍ Rumyantsev, S.L.; Pala, N.; Shur, M.S.; Borovitskaya, E.; Dmitriev, A.P.; Levins 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 108 KB

Contact Resistance Reduction in AlGaN/Ga

Contact Resistance Reduction in AlGaN/GaN Heterostructure Field Effect Transistors

✍ R. Amaya; J. Bardwell; J. Webb; H. Tang; T.W. MacElwee; N.G. Tarr 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 109 KB

Refractive index changes in AlGaN/GaN he

Refractive index changes in AlGaN/GaN heterostructure field-effect transistors

✍ I. Saidi; L. Bouzaïene; H. Mejri; H. Maaref 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 254 KB

Using the envelope wavefunction approximation and the compact density matrix formalism, we have investigated theoretically the linear and nonlinear refractive index changes in AlGaN/GaN quantum well heterostructures aimed for designing electro-optical modulators. The confining potential in the heter