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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

✍ Scribed by Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf

Book ID: 123619806
Publisher: Institute of Pure and Applied Physics
Year: 2009
Tongue: English
Weight: 239 KB
Volume: 48
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.04C101

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