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1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

✍ Scribed by Selvaraj, Susai Lawrence; Watanabe, Arata; Wakejima, Akio; Egawa, Takashi

Book ID: 118041944
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 415 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2012.2207367

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