AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

✍ Scribed by Yi-Wei Lian; Yu-Syuan Lin; Hou-Cheng Lu; Yen-Chieh Huang; Hsu, S.S.H.

• Book ID: 118036293
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 367 KB
• Volume: 33
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2012.2197171