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High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

✍ Scribed by Masahiko Kuraguchi; Yoshiharu Takada; Wataru Saito; Ichiro Omura; Kunio Tsuda

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 109 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461416

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