Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer
✍ Scribed by Oshimura, Yoshinori ;Sugiyama, Takayuki ;Takeda, Kenichiro ;Iwaya, Motoaki ;Takeuchi, Tetsuya ;Kamiyama, Satoshi ;Akasaki, Isamu ;Amano, Hiroshi
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 343 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
AlGaN/GaN heterostructure field‐effect transistors were grown by metalorganic vapor phase epitaxy on Fe‐doped GaN substrates with a preflow of the Mg source. We realized a low drain leakage current, 1.05 µA/mm, at V~DS~ = 20 V and V~GS~ = −5 V with L~GD~ = 3 µm. This leakage current was one order of magnitude lower than that obtained without a preflow of the Mg source. The breakdown voltage was over 250 V with L~GD~ = 10 µm. The on resistance was estimated to be 3.6 mΩ cm^2^. No significant redistribution or memory effect of Mg was observed by secondary ion mass spectroscopy measurement.