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Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

✍ Scribed by Kazuki Nomoto; Masataka Satoh; Tohru Nakamura


Publisher
Wiley (John Wiley & Sons)
Year
2010
Tongue
English
Weight
709 KB
Volume
93
Category
Article
ISSN
1942-9533

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