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Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

✍ Scribed by Khan, M.A.; Shur, M.S.; Chen, Q.C.; Kuznia, J.N.

Book ID: 115458965
Publisher: The Institution of Electrical Engineers
Year: 1994
Tongue: English
Weight: 232 KB
Volume: 30
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:19941461

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